Amorphous Ta-Si-N thin-film alloys as diffusion barrier in AI/Si metallizations
نویسنده
چکیده
Amorphous Ta-Si-N thin films of a wide range of compositions were prepared by r~ ~eactive sputtering of a Ta5Si3 target in a N2/ Ar plasma. The relatio~shi~ betwee~ films' compos1t10n an~ resistivity is reported. All obtained films were tested as dtffuston barners between ~1 and S1. Backscattering spectrometry combined with cross-sectional transmis_sion electron m1eroscopy were used to determine the barrier effectiveness. It was found that alummum can be melted on ~op of the Si!Ta-Si-N structure ( 675 oc for 30 min) without any evidence of metallurgtcal interactions between the layers.
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تاریخ انتشار 2000